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STWH13009
High voltage fast-switching NPN power transistor
Features

.
High voltage capability Low spread of dynamic parameters Very high switching speed
Applications
Switching mode power supplies
1
3 2
Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds. Figure 1.
TO-247
Internal schematic diagram
Table 1.
Device summary
Marking WH13009 Package TO-247 Packaging Tube
Order code STWH13009
October 2007
Rev 1
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Absolute maximum ratings
STWH13009
1
Absolute maximum ratings
Table 2.
Symbol VCEV VCEO VEBO IC ICM IB IBM PTOT Tstg TJ
Absolute maximum ratings
Parameter Collector-emitter voltage (VBE = -1.5V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tp < ms) Base current Base peak current (tp < ms) Total dissipation at Tcase = 25C Storage temperature Max. operating junction temperature Value 700 400 12 12 24 6 12 125 -65 to 150 150 Unit V V V A A A A W C C
Table 3.
Symbol Rthj-case
Thermal data
Parameters Thermal resistance junction-case __max Value 1 Unit C/W
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STWH13009
Electrical characteristics
2
Electrical characteristics
(Tcase = 25C; unless otherwise specified) Table 4.
Symbol ICEV IEBO
Electrical characteristics
Parameter Collector cut-off current (V BE = -1.5V) Emitter cut-off current (IC = 0) Test conditions VCE = 700 V VCE = 700 V VEB = 10 V TC = 100C Min. Typ. Max. 10 500 10 Unit A A A
Collector-emitter VCEO(sus)(1) sustaining voltage (IB = 0)
IC = 10 mA IC = 4 A __ IB = 0.8 A IB = 1 A IB = 1.6 A IB = 2.4 A IB = 1 A IB = 1.6 A _ VCE =5 V _ VCE =5 V IC = 5A IB2 = -2 A
400
V
VCE(sat)(1)
Collector-emitter saturation voltage
IC = 5 A __ IC = 8 A __ IC = 12 A _ IC = 5 A __ IC = 8 A __ IC = 5 A IC = 8 A VCC = 250 V IB1= 1 A L = 200 H
0.2 0.25 0.35 0.6
0.5 0.6 1 2 1.2 1.6
V V V V V V
VBE(sat)(1) hFE(1)
Base-emitter saturation voltage DC current gain Inductive load Storage time Fall time
18 11 1.7 100
30 23
ts tf
2.5 140
s ns
1. Pulsed duration = 300 ms, duty cycle 1.5%.
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Electrical characteristics
STWH13009
2.1
Electrical characteristic (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4.
DC current gain
Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation voltage
Figure 7.
Base-emitter saturation voltage
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STWH13009 Figure 8. Inductive load switching time Figure 9.
Electrical characteristics Reverse biased safe operating area
2.2
Test circuit
Figure 10. Inductive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
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Package mechanical data
STWH13009
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STWH13009
Package mechanical data
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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Revision history
STWH13009
4
Table 5.
Revision history
Document revision history
Revision 1 Initial Release Changes
Date 19-Oct-2007
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STWH13009
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